DocumentCode
2119547
Title
GaAs/InAs quantum dot high efficiency solar cell
Author
Tian Li ; Bartolo, Robert ; Dagenais, Mario
Author_Institution
Dept. of Electr. Eng., Univ. of Maryland, College Park, MD, USA
fYear
2013
fDate
8-12 Sept. 2013
Firstpage
572
Lastpage
573
Abstract
Near record conversion efficiency for a GaAs/InAs quantum dot solar cell is measured. Detailed measurements of external quantum efficiency are presented. Two different size quantum dots contribute to the generated photocurrent. Record short circuit currents are measured.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; photoemission; semiconductor quantum dots; solar cells; GaAs-InAs; conversion efficiency; external quantum efficiency; photocurrent; quantum dot solar cell; short circuit currents; Coatings; Current measurement; Gallium arsenide; Photonics; Photovoltaic cells; Quantum dots; Short-circuit currents;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2013 IEEE
Conference_Location
Bellevue, WA
Print_ISBN
978-1-4577-1506-8
Type
conf
DOI
10.1109/IPCon.2013.6656692
Filename
6656692
Link To Document