Semiconductor-less photovoltaic device

Author

Atar, Fatih B. ; Battal, Enes ; Aygun, Levent E. ; Daglar, Bihter ; Bayindir, Mehmet ; Okyay, A.K.

Author_Institution

Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey

fYear

2013

fDate

8-12 Sept. 2013

Firstpage

574

Lastpage

575

Abstract

We demonstrate a novel semiconductor-less photovoltaic device and investigate the plasmonic effects on this device structure. The device is made of metal and dielectric layers and the operation is based on hot carrier collection. We present the use of surface plasmons to improve energy conversion efficiency. The field localization provided by surface plasmons confine the incident light in the metal layer, increasing the optical absorption and hot electron generation rate inside the metal layer. The device consists of two tandem MIM (metal-insulator-metal) junctions. Bottom MIM junction acts as a rectifying diode and top MIM junction is used to excite surface plasmons. The device operation principle as well as the topology will be discussed in detail.

Keywords

MIM structures; hot carriers; photovoltaic cells; plasmonics; surface plasmons; energy conversion efficiency; field localization; hot carrier collection; hot electron generation; optical absorption; photovoltaic device; plasmonic effects; rectifying diode; surface plasmons; tandem MIM juntions; Gold; Junctions; Nanoparticles; Optical surface waves; Photovoltaic systems; Plasmons; Hot electron; metal-insulator-metal (MIM); photovoltaics; surface plasmons;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Conference (IPC), 2013 IEEE

Conference_Location

Bellevue, WA

Print_ISBN

978-1-4577-1506-8

Type

conf

DOI

10.1109/IPCon.2013.6656693

Filename

6656693