• DocumentCode
    2119674
  • Title

    Optimization of the silicon-based tunnel MIS structures as hot electron injectors

  • Author

    Grekhov, I.V. ; Shulekin, A.F. ; Vexler, M.I.

  • Author_Institution
    A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
  • Volume
    2
  • fYear
    1996
  • fDate
    9-12 Oct 1996
  • Firstpage
    345
  • Abstract
    Hot-electron Auger ionization in Al/tunnel-thin oxide/silicon structures was shown to be used most efficiently in the devices with high n-substrate doping (Nd) and/or relatively large insulator thickness. The structures with high Nd were also found to be quite appropriate for observation of electroluminescence
  • Keywords
    Auger effect; MIS devices; electroluminescence; hot carriers; tunnelling; Al-SiO2-Si; Al/tunnel-thin oxide/silicon MIS structure; Auger ionization; electroluminescence; hot electron injector; insulator thickness; n-substrate doping; optimization; Current density; Doping; Electroluminescence; Electrons; Insulation; Ionization; Neodymium; Silicon; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557391
  • Filename
    557391
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2119674