Title :
Aiming for the Best Matching Between Ultra-Shallow Doping and Milli-To Femto-Second Activation
Author :
Mizuno, Bunji ; Sasaki, Yuichiro
Author_Institution :
Ultimate Junction Technol. Inc., Moriguchi
Abstract :
Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized 2D devices and advanced 3D structures.
Keywords :
MOSFET; rapid thermal processing; semiconductor doping; MOS transistors; electric devices; plasma doping; rapid thermal processing; ultrashallow doping; Fabrication; Humans; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Rapid thermal processing; Robot kinematics; Semiconductor device doping; Technological innovation; Transistors;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on
Conference_Location :
Catania, Sicily
Print_ISBN :
978-1-4244-1228-0
Electronic_ISBN :
978-1-4244-1228-0
DOI :
10.1109/RTP.2007.4383811
