• DocumentCode
    2119949
  • Title

    Electrical and photoelectrical properties of glassy As2Se3 doped with Mn, Dy and Sm

  • Author

    Iovu, M. ; Andriesh, A. ; Shutov, S. ; Bulgaru, M. ; Popescu, M. ; Sava, F. ; Lorinczi, A.

  • Author_Institution
    Inst. of Appl. Phys., Chisinau, Moldova
  • Volume
    1
  • fYear
    1996
  • fDate
    9-12 Oct 1996
  • Firstpage
    313
  • Abstract
    The chalcogenide glassy semiconductor As2Se3 doped with Mn, Dy and Sm presents practical interest for optoelectronic devices. Doping by metals influences electrical conductivity and photoelectric characteristics. The conductivity is significantly increased by addition of Mn and Dy impurities. All the dopants hamper the photoconductivity with exception of 0.5 at.% Dy, which generates a broad impurity band in the photoconductivity spectrum near 1.05 eV, ascribed to the presence of a small amount of finely dispersed crystalline phase
  • Keywords
    arsenic compounds; chalcogenide glasses; deep levels; dysprosium; electrical conductivity; impurity states; manganese; photoconductivity; samarium; semiconductor doping; As2Se3:Dy; As2Se3:Mn; As2Se3:Sm; broad impurity band; chalcogenide glass; electrical conductivity; finely dispersed crystalline phase; impurities; optoelectronic devices; photoconductivity; photoelectric characteristics; semiconductor; Samarium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557392
  • Filename
    557392
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2119949