Title :
Laser Activated Radical Generation in Rapid Thermal Processing
Author :
Eisele, Ignaz ; Abmuth, A. ; Sulima, Torsten
Author_Institution :
Univ. der Bundeswehr Munchen, Neubiberg
Abstract :
In the present paper it will be shown that RTP combined with laser irradiation parallel to the wafer surface yields an optimum control of chemical reactions. The technique will be discussed and results regarding the surface preparation of silicon wafers as well as the deposition of atomically controlled layers for nanoelectronics will be presented. Examples are the removal of carbon containing residuals with oxygen, and the removal of the native silicon oxide with germane at temperatures of 600degC. Besides surface preparation it will also be shown that laser assisted epitaxial processes at ultra low temperatures are possible.
Keywords :
carbon; elemental semiconductors; laser beam effects; nanoelectronics; rapid thermal processing; semiconductor epitaxial layers; silicon; surface structure; Si; Si - Surface; atomically controlled layer deposition; laser activated radical generation; laser assisted epitaxial processes; laser irradiation; nanoelectronics; oxygen-carbon-containing residuals; rapid thermal processing; semiconductor industry chemical reactions; silicon oxide-germane removal; silicon wafer surface; surface preparation; temperature 600 degC; Chemical lasers; Cleaning; Electrons; Gas lasers; Heating; Lamps; Plasma temperature; Rapid thermal processing; Substrates; Temperature distribution;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on
Conference_Location :
Catania, Sicily
Print_ISBN :
978-1-4244-1228-0
Electronic_ISBN :
978-1-4244-1228-0
DOI :
10.1109/RTP.2007.4383816
