DocumentCode :
2120143
Title :
Remote plasma chemical vapor deposition for high-efficiency ultra-thin ∼25-microns crystalline Si solar cells
Author :
Sarkar, Debdeep ; Onyegam, E.U. ; Saha, Simanto ; Mathew, Lini ; Rao, Rajesh A. ; Hilali, Mohamed M. ; Smith, Roy S. ; Xu, D. ; Jawarani, D. ; Garcia, Raul ; Stout, R. ; Gurmu, A. ; Ainom, M. ; Fossum, Jerry G. ; Banerjee, Sanjay K.
Author_Institution :
University of Florida, Gainesville, 32611, USA
fYear :
2012
fDate :
3-8 June 2012
Firstpage :
1
Lastpage :
6
Abstract :
For the first time, a remote plasma chemical vapor deposition (RPCVD) based c-Si/a-Si heterojunction solar cell process was developed on thin crystalline silicon semiconductor-on-metal (SOM) substrate. In RPCVD systems, deposition temperature, deposition rate, and the distance of the sample from the plasma source can be varied to minimize the surface damage and enhance passivation quality. A silicon heterojunction (HJ) cell without intrinsic a-Si layer passivation was fabricated on an exfoliated ∼25µm c-Si SOM foil, with an efficiency of 13.4% and open-circuit voltage of 645mV. Losses in these devices were analyzed by numerical simulations and optimum device structure was designed and performance predicted.
Keywords :
Computer architecture; Heterojunctions; Metals; Microprocessors; Passivation; Photovoltaic cells; Silicon; Amorphous silicon; heterojunctions; photovoltaic cells; remote plasma CVD; solar cells; thin silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), Volume 2, 2012 IEEE 38th
Conference_Location :
Austin, TX, USA
Type :
conf
DOI :
10.1109/PVSC-Vol2.2012.6656713
Filename :
6656713
Link To Document :
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