DocumentCode :
2120259
Title :
A Consistent Drain And Substrate Current Model Of LDD MOS Devices For Circuit Simulation
Author :
Yang, J.-J. ; Chung, Steve S. ; Chou, P.C. ; Chen, C.-S. ; Lin, M.S.
Author_Institution :
National Chiao Tung University
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
140
Lastpage :
141
Keywords :
Analytical models; Circuit simulation; Electronics industry; Hot carriers; Industrial electronics; MOS devices; Manufacturing industries; Semiconductor device manufacture; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724759
Filename :
724759
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2120259
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