• DocumentCode
    2120509
  • Title

    The influence of high temperatures on radiation damage of GaInP2/GaAs/Ge triple junction cells

  • Author

    Brandt, Christian ; Baur, Carsten ; Caon, Antonio ; Muller-Buschbaum, Peter ; Zimmermann, Claus ; Andreev, Thomas

  • Author_Institution
    EADS Astrium 85521 Ottobrunn, Germany
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    We report on the isothermal annealing behavior of 1 MeV electron irradiated component cells of a GaInP2/GaAs/Ge triple-junction solar cell. The defect concentration as a function of annealing time and temperature is derived from the in-situ measured open circuit voltages. The time dependent behavior reveals the presence of partly overlapping exponential decays in defect concentration which in turn suggest the annealing of more than one defect having different activation energies.
  • Keywords
    Accuracy; Annealing; Gain measurement; Gallium arsenide; Solar cells; particle irradiation; space missions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), Volume 2, 2012 IEEE 38th
  • Conference_Location
    Austin, TX, USA
  • Type

    conf

  • DOI
    10.1109/PVSC-Vol2.2012.6656726
  • Filename
    6656726
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2120509