DocumentCode
2120517
Title
Light and heavy charge carrier caused breakdown of silicon p-n junction
Author
Puritis, T.
Author_Institution
Lab. of Semicond. Phys., Riga Tech. Univ., Latvia
Volume
2
fYear
1996
fDate
9-12 Oct 1996
Firstpage
353
Abstract
The initiation of impact ionisation is known to come mostly from light charge carriers. Transition from avalanche breakdown to thermoelectric breakdown, i.e., transition from light to heavy charge carrier caused breakdown is analysed in several microplasmas with increase in ambient temperature. Transition from light to heavy charge carrier caused secondary breakdown at increase current is analysed
Keywords
avalanche breakdown; elemental semiconductors; impact ionisation; p-n junctions; semiconductor plasma; silicon; thermoelectricity; Si; avalanche breakdown; heavy charge carriers; impact ionisation; light charge carriers; microplasma; secondary breakdown; silicon p-n junction; thermoelectric breakdown; Avalanche breakdown; Charge carrier processes; Charge carriers; Electric breakdown; Electrons; Impact ionization; P-n junctions; Silicon; Temperature; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557394
Filename
557394
Link To Document