32nm Node USJ Implant & Annealing Options

For the 32 nm node, using msec only dopant activation techniques reveal the potential for serious device variation caused by both single wafer high current implanter design and msec annealing micro-uniformity variation effects. New non-contact metrology techniques with <1mm detection resolution such as RsL (electrical Rs and leakage) and TW (thermal wave dose and damage detection) are required for process optimization to reduce these effects. Also, molecular dopant species (B₁₈H₂₂, P₂ & As₂) and high mass dopants (Sb) for n & p type SDE and HALO implantation are shown to give highest quality junctions and enhanced dopant activation with msec and SPE diffusion-less annealing techniques. To minimize strain-Si relaxation and high-k/metal gate degradation process integration trade-offs are required.