DocumentCode :
2120689
Title :
Anomalous high sensitivity high capacitance nano-structure incorporated interdigital sensors
Author :
Mehran, M. ; Mohajerzadeh, S. ; Abdi, Y.
Author_Institution :
Thin Film & Nano-Electron. Lab., Univ. of Tehran, Tehran, Iran
fYear :
2010
fDate :
1-4 Nov. 2010
Firstpage :
2559
Lastpage :
2562
Abstract :
High sensitivity, interdigital structures are realized on silicon substrates where the incorporation of silicon-based nano structures on the vertical planes of fingers leads to a significant increase in the measured capacitance of the device. Such structure shows a high sensitivity to inclination and accelerations, due to a field emission of electron from nano metric features. A preliminary model for the capacitance and its dependence on the measurement voltage is presented.
Keywords :
capacitance measurement; electron field emission; nanosensors; nanostructured materials; sensitivity; voltage measurement; Si; capacitance measurement; electron field emission; fingers vertical plane; nano-structure incorporated interdigital sensor; silicon-based nano-structure; voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2010 IEEE
Conference_Location :
Kona, HI
ISSN :
1930-0395
Print_ISBN :
978-1-4244-8170-5
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2010.5690137
Filename :
5690137
Link To Document :
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