• DocumentCode
    21207
  • Title

    Physics-Based Modeling of Power Converters From Finite Element Electromagnetic Field Computations

  • Author

    Nejadpak, Arash ; Mohammed, Osama A.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Florida Int. Univ., Miami, FL, USA
  • Volume
    49
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    567
  • Lastpage
    576
  • Abstract
    In this paper, a physics-based high-frequency (HF) model of switching power converters including the insulated gate bipolar transistor (IGBT) unit cells, heat sink, and connective printed circuit board (PCB) traces combined in a single electrical circuit is presented. The IGBT model includes the HF stray components superimposed on the well-known Hefner IGBT model. The HF components were calculated using a 3-D quasi-static finite element (3-D FE) analysis. The proposed complex model of the IGBT was verified both numerically and experimentally at different switching frequencies. The computed IGBT model was used in a low-high frequency model of a motor-drive system, and the common mode ground current was experimentally verified showing excellent results.
  • Keywords
    electromagnetic compatibility; finite element analysis; insulated gate bipolar transistors; motor drives; power semiconductor switches; printed circuits; switching convertors; 3D FE analysis; 3D quasi-static finite element; HF model; Hefner IGBT model; PCB traces; common mode ground current; electrical circuit; finite element electromagnetic field computations; heat sink; insulated gate bipolar transistor; low-high frequency model; motor-drive system; physics-based high-frequency model; printed circuit board; switching frequencies; switching power converters; Analytical models; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Mathematical model; Semiconductor device modeling; Switches; Electromagnetic interference (EMI); electromagnetic compatibility (EMC); finite elements; high-frequency (HF) modeling; power semiconductor switches;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2012.2206046
  • Filename
    6226473