DocumentCode :
2120737
Title :
Bi-Directional Reflectivity of Surfaces with Anisotropic Roughness on the Wafer Backside
Author :
Hsu, Pei-Feng ; Buchanan, Robert R.
Author_Institution :
Dept. of Mech. & Aerosp. Eng., Florida Inst. of Technol., Melbourne, FL
fYear :
2007
fDate :
2-5 Oct. 2007
Firstpage :
231
Lastpage :
238
Abstract :
Light scattering from rough surfaces is an area of research that has received a great deal of interest from several engineering disciplines. Analytical models for reflectivity have been useful in the study of medical imaging, atomic physics, remote sensing and rapid thermal processing (RTP) of silicon semiconductor wafers. This paper presents a new variation of the surface generation method (SGM) approach to geometric optics (GO) modeling of reflectivity. The presented approach employs a triangular facet (TF) surface treatment instead of the conventional rectangular facets. This new method is used to calculate bidirectional reflectivity distribution function (BRDF) results for one-dimensional and two-dimensional surfaces with varying microscale roughness characteristics. The results agree well with published analytical and experimental findings, indicating that the TF method is a reliable means of estimating surface reflectivity when the geometric optics regime is valid. At large angles of incidence and the BRDF results exhibit an interesting off-specular reflectivity peak that appears to correspond well with existing experimental findings. This behavior is caused by the effects of Fresnel reflectivity at large incident light angles and the geometrical relationship between the incident beam and the number of facets covered by the beam width. A comparison with the rigorous finite-difference time-domain solution of the light scattering from the one-dimensional random roughness surfaces allows the validity regime map of the GO to be drawn. The map will facilitate the use of the GO solution that is computationally efficient than many other methods.
Keywords :
Fresnel diffraction; electron beam effects; elemental semiconductors; finite difference time-domain analysis; light scattering; rapid thermal processing; reflectivity; silicon; surface roughness; surface treatment; Fresnel reflectivity; Si; Si - Surface; atomic physics; bidirectional reflectivity distribution function; conventional rectangular facets; finite-difference time-domain solution; geometric optics modeling; incident beam-facet relationship; incident light angles; light scattering; medical imaging; microscale roughness; one-dimensional surfaces; rapid thermal processing; remote sensing; silicon semiconductor wafers; surface anisotropic roughness; surface generation method approach; surface reflectivity; triangular facet surface treatment; two-dimensional surfaces; Anisotropic magnetoresistance; Bidirectional control; Biomedical optical imaging; Geometrical optics; Light scattering; Optical scattering; Reflectivity; Rough surfaces; Surface roughness; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on
Conference_Location :
Catania, Sicily
Print_ISBN :
978-1-4244-1227-3
Electronic_ISBN :
978-1-4244-1228-0
Type :
conf
DOI :
10.1109/RTP.2007.4383847
Filename :
4383847
Link To Document :
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