Title :
The Influence of Preparing Conditions on the Properties of CdS Polycrystalline Thin Films Prepared by Magnetron Sputtering
Author :
Hu, Songbai ; Zheng, Jiagui ; Feng, Lianghuan ; Li, Wei ; Yang, Dingyu
Author_Institution :
Coll. of Mater. Sci. & Eng., Sichuan Univ., Chengdu, China
Abstract :
CdS polycrystalline thin films were fabricated by magnetron sputtering and the influence of substrates, sputtering powers, pressures, and substrate temperatures on the structure of thin films is investigated. The films deposited on substrates of glass, quartz, SnO2: F and p-type single silicon are hexagonal phase and they grow preferentially along (002) planes. As the radio-frequency power and substrate temperature increase, the preferential growth is improved, while it is decreased with the increases of pressure especially over 0.2 Pa. In addition, annealing in air or N2 or with CdCl2 can increase the grain size greatly and promote preferential growing.
Keywords :
II-VI semiconductors; annealing; cadmium compounds; glass; grain size; quartz; semiconductor growth; semiconductor thin films; silicon; sputter deposition; substrates; tin compounds; wide band gap semiconductors; CdS; CdS polycrystalline thin films; Si; SiO2; SnO2:F; SnO2:F substrate; annealing; glass substrate; grain size; magnetron sputtering; preparing conditions; quartz substrate; radio-frequency power; silicon substrate; sputtering powers; substrate influence; substrate temperatures; thin film structure; Annealing; Glass; Grain size; Magnetic properties; Radio frequency; Silicon; Sputtering; Substrates; Temperature; Transistors;
Conference_Titel :
Power and Energy Engineering Conference (APPEEC), 2010 Asia-Pacific
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4812-8
Electronic_ISBN :
978-1-4244-4813-5
DOI :
10.1109/APPEEC.2010.5449533
