Silicon Laser Annealing by a Two-Pulse Laser System with Variable Pulse Offsets

Double-pulsed high-power excimer laser annealing is investigated for use as a means of implanted dopant activation. The laser setup incorporates two lasers that allow double pulse laser annealing with pulse offsets much smaller than the repetition of the individual XeCl excimer lasers. In this configuration, the pulse offset can be fine tuned. Sheet resistances are measured and thermal simulations are conducted to study temperature profiles. Results show, that the total laser energy needed for a complete activation increases with the pulse separation. The increase can be compensated by substrate heating. In this way the thermal budget can be tuned with more freedom.