Title :
Laser annealing of a-Si for realization of polycrystalline Si film on plastic substrate
Author :
Mangano, F. ; Caristia, L. ; Costa, N. ; Camalleri, M. ; Ravesi, S. ; Scalese, S. ; Bagiante, S. ; Privitera, V.
Author_Institution :
Stradale Primosole 50, Catania
Abstract :
In this paper we discuss the laser annealing crystallization of hydrogenated a-Si film deposited at 250degC by means of PECVD technique. Abrupt out-diffusion of hydrogen damages the deposited layers during single shot high energy density laser annealing. On the contrary, a multisteps laser annealing approach, from low to high energy density, allows us to achieve good poly-Si film, without any H-related defect.
Keywords :
crystallisation; elemental semiconductors; laser beam annealing; plasma CVD; semiconductor thin films; PECVD technique; Si; Si - Interface; high energy density; hydrogen out-diffusion; laser annealing crystallization; plastic substrate; polycrystalline silicon film; temperature 250 C; Annealing; Chemical lasers; Crystallization; Gas lasers; Hydrogen; Laser beams; Plasma temperature; Plastic films; Semiconductor films; Substrates;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on
Conference_Location :
Catania, Sicily
Print_ISBN :
978-1-4244-1228-0
Electronic_ISBN :
978-1-4244-1228-0
DOI :
10.1109/RTP.2007.4383853
