DocumentCode
2120947
Title
Lasers Solutions for Annealing
Author
Turk, B. ; Paetzel, Rainer ; Brune, Jan ; Govorkov, S. ; Simon, Frank
Author_Institution
Coherent Inc., Santa Clara
fYear
2007
fDate
2-5 Oct. 2007
Firstpage
281
Lastpage
289
Abstract
The application of lasers for annealing of wafer-based and thin-film microelectronic devices is steadily increasing. Excellent control of material characteristics (for example, dopant activation profile) can be achieved through proper selection of laser parameters, such as wavelength, pulse duration and fluence, which directly influence the laser material interaction. In this paper, we present several lasers and optical systems from Coherent that have proven to be useful for annealing in both microelectronic and macroelectronic applications. These laser systems include Excimer Lasers in the ultraviolet and our unique high-power continuous-wave laser system that delivers scalable output power of multiple hundreds of Watts in the visible wavelength range. We will present results from recent work involving dopant activation, and will present several application examples from Flat Panel Display annealing and crystallization, which we propose are directly applicable to wafer-based microelectronics as well.
Keywords
crystallisation; integrated circuit technology; laser beam annealing; annealing; crystallization; dopant activation; excimer lasers; flat panel display annealing; laser systems; lasers solutions; thin-film microelectronic devices; Annealing; Flat panel displays; Laser applications; Microelectronics; Optical control; Optical materials; Optical pulses; Power generation; Power lasers; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on
Conference_Location
Catania, Sicily
Print_ISBN
978-1-4244-1228-0
Electronic_ISBN
978-1-4244-1228-0
Type
conf
DOI
10.1109/RTP.2007.4383855
Filename
4383855
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