First Quantitative Observation of Local Temperature Fluctuation in Millisecond Annealing

We report, for the first time, a detailed study of the 100 mum-scaled emissivity and temperature variation in millisecond annealing (MSA) depending on the Si trench structure, the shallow trench isolation (STI) structure, and transistor structure measured by Thermawave method. Flash lamp annealing (FLA) was applied as MSA technique. In case of Si trench structure with varying the trench depth, the relation between the trench depth and emissivity was clarified quantitatively. It was found that micro temperature variation within a chip driven by the emissivity variation exceeds of 100degC as the transistor structure was annealed by FLA.