DocumentCode :
2121279
Title :
Efficient Deep-submicron Flash-EPROM Device Simulation Using Energy Transport Model
Author :
Peng, Jack ZZ ; Longeor, S. ; Frey, Jeffrey
Author_Institution :
Advanced Micro Devices
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
168
Lastpage :
169
Keywords :
Capacitors; Design optimization; EPROM; Educational institutions; Impact ionization; Lifting equipment; Nonvolatile memory; Steady-state; Sun; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724772
Filename :
724772
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2121279
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