• DocumentCode
    2121326
  • Title

    High Efficiency and Power Ion Implanted MESFET Devices

  • Author

    Bastida, E.M. ; Antolini, P. ; Castelli, A. ; Donzelli, G.P. ; Gabbrielli, B. ; Longari, C. ; Rasà, F. ; Scopelliti, L.

  • Author_Institution
    ALCATEL TELETTRA, Via Trento 30, 20059 Vimercate, MI, Italy.
  • Volume
    2
  • fYear
    1994
  • fDate
    5-9 Sept. 1994
  • Firstpage
    1137
  • Lastpage
    1142
  • Abstract
    The paper describes how through proper new process features power FET devices with surprisingly increased power and efficiency have been recently produced. In particular the power added efficiency reach values higher than those expected from standard literature relationships. The reasons of this fact are discussed.
  • Keywords
    Annealing; FETs; Fabrication; Frequency; MESFETs; Ohmic contacts; Power measurement; Surface treatment; Transconductance; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1994. 24th European
  • Conference_Location
    Cannes, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1994.337366
  • Filename
    4138412
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2121326