DocumentCode :
2121906
Title :
Electrical characterization of a-SiC/c-Si solar cell structures
Author :
Perny, Milan ; Saly, Vladimir ; Vary, Michal ; Mikolasek, Miroslav ; Huran, Jozef
Author_Institution :
Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Bratislava, Slovakia
fYear :
2015
fDate :
6-10 May 2015
Firstpage :
16
Lastpage :
20
Abstract :
The heterojunction solar cell structure consists of thin doped amorphous SiC layer and crystalline n-type silicon. Dark and light current-voltage (I–V) measurements were performed in order to obtained basic electric and PV parameters of prepared solar cell structures. Biased complex impedance spectra of Al/a-SiC/c-Si(n)/Al heterojunction in the dark are reported and analyzed. AC equivalent circuit was obtained by fitting of impedance dependences and its electronic components were used to describe the electronic transport properties of prepared structures.
Keywords :
Amorphous silicon; Capacitance; Heterojunctions; Impedance; Photovoltaic cells; Photovoltaic systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Technology (ISSE), 2015 38th International Spring Seminar on
Conference_Location :
Eger, Hungary
Type :
conf
DOI :
10.1109/ISSE.2015.7247953
Filename :
7247953
Link To Document :
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