A Physics-Based Non-Quasi-Static Large-Signal Model for GaAs MESFETs

Taking the device dynamic effects into account, an improved physics-based large-signal model for GaAs MESFET has been developed. The device dynamic effects are described using time-dependent charge sources. New and simple formulations for the time-dependent charge sources have been derived, which can be easily implemented in a Harmonic Balance based nonlinear circuit analysis program. As a result, the accuracy of the new model has been improved at high frequencies in addtion to the large voltage validity range of the charge-based model.