DocumentCode
2122206
Title
Large-Signal Modelling of Millimetre-Wave HEMTs
Author
Singh, Ranjit ; Snowden, Christopher M.
Author_Institution
Microwave and Terahertz Technology Group, Department of Electronic and Electrical Engineering, University of Leeds, Leeds, LS2 9JT, UK
Volume
2
fYear
1994
fDate
5-9 Sept. 1994
Firstpage
1325
Lastpage
1330
Abstract
A highly efficient physical HEMT model capable of characterizing the whole spectrum of HEMT device structures is presented. This has been used to predict DC, small and large-signal microwave performance. The model takes into consideration the parasitic MESFET conduction, quantum effects, DX centers, and trapping phenomena. Its unique formulation and efficiency make it suitable for the computer aided design of HEMT subsystems. A computationally efficient physically based S-parameters simulation technique is described. An equivalent circuit model is generated from physics based dynamic simulation. It can also be used to predict S-parameters and for indirect linking of the physical model to existing circuit analysis CAD tools. The physical large-signal model is applied to the analysis of a amplifier.
Keywords
Circuit simulation; Computational modeling; Equivalent circuits; HEMTs; Joining processes; MESFETs; MODFETs; Microwave devices; Physics computing; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1994. 24th European
Conference_Location
Cannes, France
Type
conf
DOI
10.1109/EUMA.1994.337398
Filename
4138444
Link To Document