High performance mode field converter GaInAsP laser integrated with improved butt-coupled passive waveguide

Author

Mukaihara, T. ; Kurobe, T. ; Yamanaka, N. ; Iwai, N. ; Kasukawa, A.

Author_Institution

R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan

fYear

2000

fDate

2000

Firstpage

29

Lastpage

32

Abstract

We have demonstrated integration of mode field converter (MFC) GaInAsP laser with butt-coupled passive waveguide. High coupling efficiency of 96% at the butt-junction was achieved using an improved SiN mask for selective MOCVD growth. Threshold current as low as 2.2 mA and vertical beam divergence as narrow as 12° could be achieved. This integrated laser is very promising candidate for coming optical module in low power consumption and low cost optical network systems

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical couplers; semiconductor lasers; 2.2 mA; 96 percent; GaInAsP; SiN; SiN mask; beam divergence; butt coupled passive waveguide; mode field converter GaInAsP laser; monolithic integration; optical module; selective MOCVD growth; threshold current; Integrated optics; Laser beams; Laser modes; MOCVD; Optical fiber networks; Optical waveguides; Power lasers; Silicon compounds; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850222

Filename

850222