Title :
Metamorphic InP/InGaAs double-heterojunction bipolar transistor structure grown on GaAs by solid source molecular beam epitaxy
Author :
Zheng, Haiqun ; Radhakrishnan, K. ; Wang, Hong ; Yuan, Kaihua ; Yoon, Soon Fatt ; Ng, Geok Ing
Author_Institution :
Microelectron. Centre, Nanyang Technol. Univ., Singapore
Abstract :
We report, for the first time, metamorphic InP/InGaAs double-heterojunction bipolar transistor (DHBT) structures grown on GaAs substrates by solid source molecular beam epitaxy (SSMBE). A linearly graded InxGa1-xP(x:0.48 to 1) buffer layer was used to accommodate the strain relaxation. Mesa-type devices were fabricated and characterized. The devices show promising DC and RF performances, indicating the great potential for SSMBE growth of metamorphic InP/InGaAs HBT structures for high speed and high frequency applications
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; GaAs; GaAs substrate; InP-InGaAs; InP/InGaAs double heterojunction bipolar transistor; buffer layer; mesa-type device; metamorphic structure; solid source molecular beam epitaxy; strain relaxation; Bipolar transistors; Buffer layers; Capacitive sensors; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Radio frequency; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850225
