LP-MOVPE growth of DHBT structure with heavily Zn-doped base and suppressed outdiffusion

Author

Gini, E. ; Bauknecht, R. ; Rohner, M. ; Schnyder, I. ; Melchior, H.

Author_Institution

Inst. for Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

2000

fDate

2000

Firstpage

45

Lastpage

47

Abstract

Low pressure MOVPE growth of layer structures for high performance double hetero bipolar transistors (DHBT) is presented. A very high zinc base doping level of 3.5×10¹⁹/cm³ was obtained at a growth temperature of 490°C. Zinc outdiffusion was avoided by growth interruptions. The layer structure included a step graded base collector heterojunction. Fabricated DHBT´s showed β=70, f_T=115 GHz, f_max=170 GHz, and BV_CE0=10 V

Keywords

III-V semiconductors; diffusion; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor growth; vapour phase epitaxial growth; zinc; 490 C; InP DHBT; InP:Zn; double heterojunction bipolar transistor; growth interruption; heavily zinc doped base; layer structure; low pressure MOVPE growth; outdiffusion; step graded base collector heterojunction; Doping; Epitaxial growth; Epitaxial layers; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Lattices; Temperature; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850226

Filename

850226