Quantum well intermixing caused by nonstoichiometric InP

Author

Haysom, J.E. ; Poole, P.J. ; Aers, G.C. ; Rolfe, S.J. ; Raymond, S. ; Mitchell, I.V. ; Charbonneau, S.

Author_Institution

Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

fYear

2000

fDate

2000

Firstpage

56

Lastpage

59

Abstract

We study the thermal stability of InP-based quantum well hetero-structures in which the temperature of growth of one or more layers is slightly reduced in comparison to standard growth. We examine the enhancement of quantum well intermixing (QWI) using repeated isothermal anneals, and show that the enhancement is a transient effect due to a surplus of mobile defects grown-in to the low temperature (LT) layers. These defects are related to a surplus of group-V atoms, and are thought to be phosphorus interstitials. The resultant interdiffusion occurs at different rates on each sublattice, thereby causing an enhancement of local strains, as observed by X-ray diffraction

Keywords

III-V semiconductors; X-ray diffraction; annealing; chemical interdiffusion; indium compounds; interstitials; semiconductor growth; semiconductor quantum wells; stoichiometry; thermal stability; InP; X-ray diffraction; interdiffusion; interstitial defect; isothermal annealing; low temperature growth; nonstoichiometric indium phosphide; quantum well intermixing; thermal stability; Annealing; Buffer layers; Conductivity; Etching; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Performance evaluation; Protection; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850229

Filename

850229