Investigation of p-n junction and dopant profiles in InP-based laser by low voltage SEM

Author

Wang, Dong-Ning ; Venables, David ; Waltemyer, Debra ; Lentz, Janet

Author_Institution

Optoelectron. Center, Lucent Technol., Breinigsville, PA, USA

fYear

2000

fDate

2000

Firstpage

60

Lastpage

63

Abstract

The observation of p-n junctions and electrically active dopant profiles in InP-based heterostructures by secondary electron (SE) imaging in a low-voltage scanning electron microscope (LVSEM) is reported. These observations are shown to be qualitatively similar to secondary ion mass spectrometry dopant profiles in one dimension, and to selective etching results in two dimensions. The results support the conclusion that SE imaging by LVSEM can be used as a simple and powerful technique for qualitatively monitoring of one and two dimensional dopant distributions in InP-based devices

Keywords

III-V semiconductors; doping profiles; indium compounds; p-n heterojunctions; scanning electron microscopy; semiconductor lasers; InP; dopant profile; indium phosphide heterostructure laser; low voltage scanning electron microscopy; p-n junction; secondary electron imaging; Chemical lasers; Etching; Indium phosphide; Low voltage; Mass spectroscopy; Monitoring; P-n junctions; Scanning electron microscopy; Semiconductor device doping; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850230

Filename

850230