A study of the influence of the substrate and epilayers on the InP HEMT gate current

Author

Aupetit-Berthelemot, C. ; Dubois, A. ; Ladner-Marcoux, C. ; Decobert, J. ; Dumas, J.M.

Author_Institution

ENSIL, Limoges Univ., France

fYear

2000

fDate

2000

Firstpage

71

Lastpage

74

Abstract

The excess gate current usually measured on InP HEMT structures is mainly due to an impact ionization mechanism developing in the InGaAs channel. Recent investigations noted on the presence of a second ionization mechanism near pinch-off condition. In this communication we report studies on both mechanisms. We verified that the first one is effectively due to InGaAs channel, depending on the gate-to-drain distance. The second one is more complex to investigate. From our experiments, a contribution of the substrate/buffer layer interface is postulated. Holes are injected toward this interface

Keywords

III-V semiconductors; high electron mobility transistors; impact ionisation; indium compounds; semiconductor epitaxial layers; InGaAs channel; InP; InP HEMT; epilayer; gate current; hole injection; impact ionization; ionization mechanism; pinch-off; substrate/buffer layer interface; Buffer layers; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Ionization; Optical fiber communication; Optical receivers; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850233

Filename

850233