Design and analysis of two-dimensional InAlAs/InGaAs Single Hetero-junction Bipolar Transistor

Author

Nawaz, Hassan ; Rizwan, M.

Author_Institution

Dept. of Electr. Eng., Comsats Inst. of Inf. & Technol., Islamabad, Pakistan

fYear

2013

fDate

15-19 Jan. 2013

Firstpage

372

Lastpage

376

Abstract

The paper presents an InAlAs/InGaAs Hetero-junction Bi-polar transistor structure. The structure formation and performance analysis has been carried out using SILVACO software. Parametric analysis is carried out and results are presented in correspondence with the theory. Doping profile of proposed HBT is optimized to achieve appropriate current gain and maintain possibly low resistance in the base region to avoid recombination. Emitter area of 5×5 μm² is used to achieve low off set voltage and high gain of 62dB while low doping enabled the device to operate effectively at high frequencies that is up-till 80GHz. Energy band diagram and effects of different layers are discussed showing efficient workability of the proposed structure.

Keywords

III-V semiconductors; aluminium compounds; electronic design automation; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; HBT; InAlAs-InGaAs; SILVACO software; current gain; doping profile; emitter area; energy band diagram; parametric analysis; single heterojunction bipolar transistor; Computational modeling; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Sciences and Technology (IBCAST), 2013 10th International Bhurban Conference on

Conference_Location

Islamabad

Print_ISBN

978-1-4673-4425-8

Type

conf

DOI

10.1109/IBCAST.2013.6512182

Filename

6512182