Title :
Excess gate leakage at low voltage in InP-based HEMTs
Author :
Maher, H. ; Scavennec, A. ; Dccobert, J. ; Post, G. ; Zerounian, N. ; Cavassilas, N. ; Aniel, F.
Author_Institution :
OPTO+, Marcoussis, France
Abstract :
Excess gate leakage is usually observed in InP-based HEMTs as a hump in the ig-Vg characteristics, appearing at low Vds. This excess current has been ascribed to impact ionization in the InGaAs channel. A second hump is also observed at higher Vds. Analysis of the features of the two humps, supported by electroluminescence observations, points to a more complex behaviour, with real space transfer through the buffer layer to the AlInAs/InP interface playing a major role in the low Vds hump
Keywords :
III-V semiconductors; electroluminescence; high electron mobility transistors; impact ionisation; indium compounds; AlInAs-InGaAs; InP; InP HEMT; electroluminescence; excess gate leakage current; impact ionization; real space transfer; substrate/buffer layer interface; Buffer layers; Electroluminescence; Electrons; Gate leakage; HEMTs; Impact ionization; Indium gallium arsenide; Indium phosphide; Low voltage; MODFETs;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850237
