DocumentCode
2122883
Title
Implantation beam angle study for Al implanted in 6H-SiC
Author
Morvan, E. ; Montserrat, J. ; Godignon, P. ; Fernandez, J. ; Flores, D. ; Locatelli, M.L. ; Millán, L. ; Brezeanu, G.
Author_Institution
Centro Nacional de Microelectron. (CNM-CSIC), Bellaterra, Spain
Volume
2
fYear
1996
fDate
9-12 Oct 1996
Firstpage
393
Abstract
In this paper a simulation study of Al implantation into 6H-SiC single crystal is presented. Beam orientation with respect to crystal axis has been investigated. This aspect is of crucial importance to achieve good implantation process control. A first step analysis is given and values for optimum ion beam angles are proposed
Keywords
aluminium; channelling; ion implantation; process control; semiconductor materials; semiconductor process modelling; silicon compounds; 6H-SiC:Al; Al implantation; SiC:Al; beam orientation; channelling behaviour; first step analysis; implantation process control; optimum ion beam angles; simulation; Crystallization; Implants; Ion beams; Lattices; Rotation measurement; Semiconductor device doping; Semiconductor device modeling; Semiconductor process modeling; Silicon carbide; Trajectory;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557403
Filename
557403
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