High fT 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs

We fabricated 50-nm-gate lattice-matched InAlAs/InGaAs High Electron Mobility Transistors (HEMTs) using a conventional process under low temperatures below 300°C, and measured DC and RF performance. The measured cutoff frequency f_T of our 50-nm-gate HEMT is 362 GHz, which is much higher than those in previous works, and the highest value ever reported for any transistor. The excellent RF performance might result from the low-temperature fabrication process