Advantage of TCAD to analyze RF-LDMOS for the broadband power amplifier

Author

Kashif, A. ; Azam, Saad ; Hayat, K. ; Imran, Muhammad

Author_Institution

Centre of Excellence in Sci. & Appl. Technol. (CESAT), Islamabad, Pakistan

fYear

2013

fDate

15-19 Jan. 2013

Firstpage

385

Lastpage

388

Abstract

Technology Computer Aided Design (TCAD) provides an alternate method to study the power amplifier (PA) design prior to fabrication and is very useful for the extraction of an accurate large signal model. This paper presents a design approach from device to circuit level to study the performance of a broadband PA based on computational load-pull (CLP) analysis. To validate TCAD approach, we have designed a broadband (1.9 - 2.5 GHz) class AB PA with an output matching network. The large signal simulation results verify the optimum impedance value (Z_f) by providing a desired RF output power of 30.8 dBm.

Keywords

integrated circuit design; power amplifiers; technology CAD (electronics); wideband amplifiers; CLP analysis; RF-LDMOS; TCAD; broadband power amplifier; class AB PA; computational load-pull analysis; frequency 1.9 GHz to 2.5 GHz; output matching network; power amplifier design; technology computer aided design; Computational modeling; Europe; Heterojunction bipolar transistors; Impedance; Integrated circuit modeling; LC network; Power amplifier; Si-LDMOS; load-pull; time-domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Sciences and Technology (IBCAST), 2013 10th International Bhurban Conference on

Conference_Location

Islamabad

Print_ISBN

978-1-4673-4425-8

Type

conf

DOI

10.1109/IBCAST.2013.6512185

Filename

6512185