High performance GaN HEMT class-AB RF power amplifier for L-band applications

Author

Hayat, K. ; Kashif, A. ; Azam, Saad ; Mehmood, T. ; Imran, Muhammad

Author_Institution

Centre of Excellence in Sci. & Technol. (CESAT), Islamabad, Pakistan

fYear

2013

fDate

15-19 Jan. 2013

Firstpage

389

Lastpage

392

Abstract

This paper presents the design and characterization of a GaN HEMT based class-AB power amplifier (PA) for L-band radar applications at 1.3 GHz. The aim of this paper is to design and develop a 30 Watt PA together with high efficiency, small in size and low-cost solution. The source and load impedances have been extracted by performing source and load-pull for attaining an optimal performance of class-AB PA. The fabricated PA provides an RF power of 45.5 dBm at 1-dB compression point. The power added efficiency (PAE) of 63% is achieved together with power gain of 13.5 dB at desired frequency.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; radar applications; wide band gap semiconductors; GaN; HEMT; L-band radar applications; PAE; class-AB RF power amplifier; frequency 1.3 GHz; power added efficiency; Gain measurement; Gallium nitride; HEMTs; Heating; Radio frequency; Silicon; Surface impedance; GaN HEMT; Power amplifier; large signal; load-pull; radar;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Sciences and Technology (IBCAST), 2013 10th International Bhurban Conference on

Conference_Location

Islamabad

Print_ISBN

978-1-4673-4425-8

Type

conf

DOI

10.1109/IBCAST.2013.6512186

Filename

6512186