Title :
2D simulations of InGaAs/InAlAs/InP HEMTs with asymmetrical gate recess
Author :
Robin, Franck ; Homan, Otte J. ; Bächtold, Wemer
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electr., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
InGaAs/InAlAs/InP HEMTs were studied with an emphasis on the on-state breakdown and high-frequency properties. 2D physical simulations showed an excellent agreement with measured devices. It was demonstrated that an increase of the gate-drain spacing, while keeping the gate-source distance constant by means of an asymmetric gate recess, increases the on-state breakdown voltage. The high-frequency properties are not significantly degraded by the asymmetric gate recess. InP HEMTs with composite channels were also investigated
Keywords :
Aluminium compounds; Gallium arsenide; High electron mobility transistors; III-V semiconductors; Indium compounds; Semiconductor device breakdown; Semiconductor device models; 2D simulation; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP HEMT; asymmetrical gate recess; composite channel; high frequency properties; on-state breakdown voltage; Electric breakdown; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave technology; Shape; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850241
