DocumentCode
2123002
Title
Voltage Dependence of the Optical Response of a Pseudomorphic HFET-Photodetector
Author
Bangert, A. ; Rosenzweig, J. ; Bosch, R. ; Bronner, W. ; Köhler, K. ; Raynor, B.
Author_Institution
Fraunhofer-Institut fÿr Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg i.Br., Germany. Phone: +49 (761) 5159-525, Fax: +49 (761) 5159-565
Volume
2
fYear
1994
fDate
5-9 Sept. 1994
Firstpage
1477
Lastpage
1482
Abstract
A pseudomorphic HFET has been used as a photodetector. The optical response of such a device was measured in the frequency range from 100 kHz up to 10 GHz. The response of the HFET-photodetector showed a strong dependence on the applied drain-to-source bias voltage of the transistor. This behaviour is explained by an amplification of the primarily generated photocurrent by traps in the buffer layer of the transistor. The occupation time of these traps can strongly depend on the applied voltage.
Keywords
Buffer layers; Frequency measurement; HEMTs; MODFETs; Optical buffering; Optical devices; Photoconductivity; Photodetectors; Stimulated emission; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1994. 24th European
Conference_Location
Cannes, France
Type
conf
DOI
10.1109/EUMA.1994.337425
Filename
4138471
Link To Document