Title :
Application of self-assembled InAs nanodots for a HEMT-type memory-effect transistor
Author :
Koike, K. ; Li, S. ; Saitoh, K. ; Sasa, S. ; Inoue, M. ; Yano, M.
Author_Institution :
New Mater. Res. Center, Osaka Inst. of Technol., Japan
Abstract :
This letter describes an application of InAs nanodots embedded in an Al0.5Ga0.5As for a memory-effect field-effect transistor. The device experiences a shift of threshold gate voltage as a function of the amount of electrons in the nanodots. Although this shift volatilizes with the time after memory programming operation, a considerable part of the shift is retained more than 100 h even at room temperature
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; self-assembly; semiconductor quantum dots; semiconductor storage; Al0.5Ga0.5As; Al0.5Ga0.5As barrier layer; HEMT; InAs; InAs self-assembled nanodots; memory effect field effect transistor; threshold voltage; Electrodes; Electrons; Excitons; FETs; Gallium arsenide; HEMTs; Nanoscale devices; Self-assembly; Temperature dependence; Threshold voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850243
