DocumentCode :
2123039
Title :
Low frequency noise in AlInAs/InGaAs/InP HFETs
Author :
Sakalas, P. ; Nawaz, M. ; Zirath, H.
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
fYear :
2000
fDate :
2000
Firstpage :
110
Lastpage :
113
Abstract :
We report on a measurement of low frequency noise in InP based HFETs, fabricated on MOCVD and MBE grown materials. The obtained spectral density of the drain current fluctuations is close to the pure flicker noise. An analysis of the results indicates that low frequency noise mainly stems from the carrier number fluctuations. An effective density of traps was found less than 1010 ev-1 cm -2. Input referred noise of MBE grown InP HFETs was compared with that of MGF4419 and Philips D01PH HFETs. The low frequency noise of InP based device lies in the range of good commercially available GaAs HFETs
Keywords :
III-V semiconductors; aluminium compounds; flicker noise; gallium arsenide; indium compounds; junction gate field effect transistors; semiconductor device noise; AlInAs-InGaAs-InP; AlInAs/InGaAs/InP HFET; MBE; MOCVD; carrier number fluctuations; drain current fluctuations; flicker noise; low frequency noise; spectral density; trap density; 1f noise; Fluctuations; Frequency measurement; HEMTs; Indium gallium arsenide; Indium phosphide; Low-frequency noise; MOCVD; MODFETs; Noise measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
ISSN :
1092-8669
Print_ISBN :
0-7803-6320-5
Type :
conf
DOI :
10.1109/ICIPRM.2000.850244
Filename :
850244
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2123039
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