Mechanism of strain relaxation and defect introduction in Ge-GaAs heterostructure: influence of ultrasound treatment

Author

Kryshtab, T.G. ; Mazin, M.A. ; Prokopenko, I.V. ; Semenova, G.N.

Author_Institution

Inst. of Semicond. Phys. NASU, Kyiv, Ukraine

Volume

2

fYear

1996

fDate

12-12 Oct. 1996

Firstpage

397

Abstract

For MBE grown Ge films on semiinsulating (001) GaAs substrates, the effect of substrate processing and subthreshold ultrasound treatment on the mechanisms of strain relaxation and structural transformations in the heterosystem is reported. X-ray topography and X-ray diffraction measurements have shown that the native oxide influences the strain relaxation. This is evidenced by the appearance of lattice tilting and mosaic structure in the films. The ultrasound treatment leads to structural relaxation by misfit dislocation nucleation, insignificant redistribution of strain deformation fields and improvement of structural perfection due to interaction between the point defects and dislocations

Keywords

X-ray diffraction; X-ray topography; dislocation interactions; dislocation nucleation; elemental semiconductors; gallium arsenide; germanium; internal stresses; mosaic structure; point defects; semiconductor epitaxial layers; semiconductor heterojunctions; stress relaxation; ultrasonic effects; GaAs; Ge-GaAs; Ge-GaAs heterostructure; MBE grown Ge films; X-ray diffraction; X-ray topography; defect introduction; lattice tilting; misfit dislocation nucleation; mosaic structure; native oxide; point defect dislocation interaction; strain deformation field redistribution; strain relaxation; structural perfection; structural transformations; substrate processing; subthreshold ultrasound treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1996., International

Conference_Location

Sinaia, Romania

Print_ISBN

0-7803-3223-7

Type

conf

DOI

10.1109/SMICND.1996.557404

Filename

557404