Title :
Modeling of ultra-low-power AlSb/InAs HEMT-RITD circuits
Author :
Ancona, M.G. ; Boos, J.B. ; Justh, E.W.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
MOBILE logic circuits composed of AlSb/InAs HEMT and RITD devices are simulated using SPICE. The individual HEMT and RITD devices are modeled directly from experimental measurements on devices fabricated at NRL and careful attention is paid to the treatment of the effects of impact ionization, trapping and other parasitics. Using these realistic device models the simulated circuits show proper latching behavior and are capable of operating at 20 GHz at supply voltages of 0.4 V. The power dissipation in the MOBILE core is around 0.3 mW/gate
Keywords :
HEMT circuits; III-V semiconductors; SPICE; aluminium compounds; impact ionisation; indium compounds; logic circuits; logic simulation; low-power electronics; resonant tunnelling diodes; 0.4 V; 20 GHz; AlSb-InAs; MOBILE logic circuit; SPICE simulation; impact ionization; latching characteristics; model; parasitics; trapping; ultra-low-power AlSb/InAs HEMT-RITD circuit; Circuit simulation; HEMTs; Impact ionization; Laboratories; Logic circuits; Microwave circuits; Microwave devices; Power dissipation; SPICE; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850249
