Modeling of ultra-low-power AlSb/InAs HEMT-RITD circuits

Author

Ancona, M.G. ; Boos, J.B. ; Justh, E.W.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

2000

fDate

2000

Firstpage

130

Lastpage

133

Abstract

MOBILE logic circuits composed of AlSb/InAs HEMT and RITD devices are simulated using SPICE. The individual HEMT and RITD devices are modeled directly from experimental measurements on devices fabricated at NRL and careful attention is paid to the treatment of the effects of impact ionization, trapping and other parasitics. Using these realistic device models the simulated circuits show proper latching behavior and are capable of operating at 20 GHz at supply voltages of 0.4 V. The power dissipation in the MOBILE core is around 0.3 mW/gate

Keywords

HEMT circuits; III-V semiconductors; SPICE; aluminium compounds; impact ionisation; indium compounds; logic circuits; logic simulation; low-power electronics; resonant tunnelling diodes; 0.4 V; 20 GHz; AlSb-InAs; MOBILE logic circuit; SPICE simulation; impact ionization; latching characteristics; model; parasitics; trapping; ultra-low-power AlSb/InAs HEMT-RITD circuit; Circuit simulation; HEMTs; Impact ionization; Laboratories; Logic circuits; Microwave circuits; Microwave devices; Power dissipation; SPICE; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850249

Filename

850249