Hydrogen passivation in InP:Zn resulting from reactive ion etching during laser stripe formation

Author

Kreissl, J. ; Moehrle, M. ; Sigmund, A. ; Bochnia, R. ; Harde, P. ; Ulrici, W.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

2000

fDate

2000

Firstpage

142

Lastpage

145

Abstract

The passivation of zinc acceptors in an InP layer after reactive ion etching (RIE) using CH₄/H₂ has been investigated. Evidence is provided that the (P-H Zn) complex is responsible for the passivation. The recovery of the hole concentration needs a reactivation energy of 1.05 eV. In spite of the passivation of the exposed p-InP areas during buried heterostructure laser contact stripe formation by RIE, the U-I characteristics are unaffected because inside the contact stripe remains a sufficiently large non-passivated p-InP channel

Keywords

III-V semiconductors; hole density; hydrogen; indium compounds; passivation; semiconductor lasers; sputter etching; zinc; I-V characteristics; InP:Zn,H; activation energy; buried heterostructure laser; contact stripe formation; hole concentration; hydrogen passivation; impurity complex; indium phosphide; reactive ion etching; zinc acceptor; Annealing; Capacitance-voltage characteristics; Etching; Gas lasers; Hydrogen; Indium phosphide; Laser transitions; Passivation; Semiconductor lasers; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850252

Filename

850252