Title :
Hydrogen passivation in InP:Zn resulting from reactive ion etching during laser stripe formation
Author :
Kreissl, J. ; Moehrle, M. ; Sigmund, A. ; Bochnia, R. ; Harde, P. ; Ulrici, W.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
The passivation of zinc acceptors in an InP layer after reactive ion etching (RIE) using CH4/H2 has been investigated. Evidence is provided that the (P-H Zn) complex is responsible for the passivation. The recovery of the hole concentration needs a reactivation energy of 1.05 eV. In spite of the passivation of the exposed p-InP areas during buried heterostructure laser contact stripe formation by RIE, the U-I characteristics are unaffected because inside the contact stripe remains a sufficiently large non-passivated p-InP channel
Keywords :
III-V semiconductors; hole density; hydrogen; indium compounds; passivation; semiconductor lasers; sputter etching; zinc; I-V characteristics; InP:Zn,H; activation energy; buried heterostructure laser; contact stripe formation; hole concentration; hydrogen passivation; impurity complex; indium phosphide; reactive ion etching; zinc acceptor; Annealing; Capacitance-voltage characteristics; Etching; Gas lasers; Hydrogen; Indium phosphide; Laser transitions; Passivation; Semiconductor lasers; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850252
