Post-transit photocurrent analysis of the distribution of localized states in a-Si:H and its alloys

Author

Adriaenssens, Guy J.

Author_Institution

Lab. voor Halfgeleiderfysica, Katholieke Univ., Leuven, Belgium

Volume

2

fYear

1997

fDate

7-11 Oct 1997

Firstpage

395

Abstract

The sandwich-cell sample geometry that is used for measuring the transient photocurrents in traditional time-of-flight (TOF) experiments in amorphous semiconductors, can also be used well beyond the TOF transit-time to measure the emission of charge carriers from deep traps. A density-of-states profile can then be calculated from the emission current, provided deep retrapping or random energy fluctuations do not dominate the response. Hydrogenated amorphous silicon and its alloys provide a full range of examples for the possibilities and problems of the technique

Keywords

amorphous semiconductors; deep levels; electron density; electronic density of states; elemental semiconductors; hydrogen; localised states; photoconductivity; silicon; Si:H; a-Si:H; amorphous semiconductors; charge carriers; deep traps; density-of-states profile; localized states distribution; post-transit photocurrent analysis; sandwich-cell sample geometry; Amorphous semiconductors; Amorphous silicon; Charge measurement; Current measurement; Geometry; Photoconductivity; Photonic band gap; Pulse measurements; Time measurement; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651220

Filename

651220