Title :
A narrowband low noise amplifier for passive imaging systems
Author :
Mehdi, G. ; Hu Anyong ; Miao Jungang
Author_Institution :
Sch. of Electron. Inf. Eng., Beihang Univ., Beijing, China
Abstract :
The design of a narrowband low noise amplifier (LNA) module at Ka band is presented. A low noise MMIC chip fabricated in GaAs pHEMT process is employed. Since the LNA is narrowband, its matching is sensitive to parasitic associated with the bond-wire interconnects and the fixture connectors. A T-type matching network which comprises of a high-low impedance lines is realized on microstrip substrate to nullify the bond-wires inductance. The planar structures in the design are simulated in ADS Momentum® while the bond-wires are modeled in a FEM based full-wave simulator. The design, assembly and packaging of the module are described. The measured results exhibit 23.5 dB gain at 35 GHz frequency. The 1:2 VSWR bandwidth is 2 GHz. The measured noise figure is 3.5 dB.
Keywords :
III-V semiconductors; MMIC amplifiers; electric connectors; electric impedance; finite element analysis; fixtures; gallium arsenide; inductance; interconnections; low noise amplifiers; microwave amplifiers; ADS momentum; FEM-based full-wave simulator; GaAs; Ka band; LNA module; T-type matching network; VSWR bandwidth; bond-wire interconnects; bond-wires inductance; fixture connectors; frequency 35 GHz; high-low impedance lines; low noise MMIC ehip; microstrip substrate; module packaging; narrowband low noise amplifier; noise figure measurement; pHEMT process; passive imaging systems; Cavity resonators; Finite element analysis; Imaging; Loss measurement; Radio frequency; Substrates; Transmission line matrix methods; Low noise amplifier; Millimeter-wave (MMW); bond-wire; noise figure;
Conference_Titel :
Applied Sciences and Technology (IBCAST), 2013 10th International Bhurban Conference on
Conference_Location :
Islamabad
Print_ISBN :
978-1-4673-4425-8
DOI :
10.1109/IBCAST.2013.6512200
