DocumentCode :
2123327
Title :
A modeling of an In0.53Ga0.47As/In0.52 Al0.48As multi-quantum wells structure using photocurrent spectroscopy
Author :
Tanaka, K. ; Murata, T. ; Kotera, N. ; Nakamura, H.
Author_Institution :
Dept. of Comput. Sci. & Electron., Kyushu Inst. of Technol., Fukuoka, Japan
fYear :
2000
fDate :
2000
Firstpage :
158
Lastpage :
161
Abstract :
Determination of parameters is important for application to opto-electronic devices. We have previously determined some band parameters in InGaAs/InAlAs multi-quantum wells under zero electric field. In this paper, we study absorption coefficient spectra in the quantum confined Stark effect using a wave equation for which our experimental parameters were substituted. The calculated transition energies and the absorption coefficients agreed quantitatively with experiment at any electric field. Thus, our modeling will reproduce the above photocurrent experiments on the QCSE, quantitatively
Keywords :
III-V semiconductors; absorption coefficients; aluminium compounds; gallium arsenide; indium compounds; photoconductivity; quantum confined Stark effect; semiconductor quantum wells; In0.53Ga0.47As-In0.52Al0.48 As; absorption coefficient; multi-quantum wells; photocurrent spectroscopy; quantum confined Stark effect; transition energies; wave equation; Absorption; Excitons; Indium gallium arsenide; Optoelectronic devices; PIN photodiodes; Photoconductivity; Potential well; Quantum computing; Quantum well devices; Stark effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
ISSN :
1092-8669
Print_ISBN :
0-7803-6320-5
Type :
conf
DOI :
10.1109/ICIPRM.2000.850256
Filename :
850256
Link To Document :
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