DocumentCode :
2123359
Title :
Zn+/P+ and Zn+/As+ co-implantation in InP single crystals
Author :
Ursaki, V.V. ; Tiginyanu, I.M. ; Ichizli, V.M. ; Terletsky, A.I. ; Pyshnaya, N.B. ; Radautsan, S.I.
Author_Institution :
Inst. of Appl. Phys., Kishinev, Russia
Volume :
2
fYear :
1996
fDate :
9-12 Oct 1996
Firstpage :
401
Abstract :
The activation efficiency of zinc impurity co-implanted with P+ and As+ ions in InP was studied by Hall-effect measurements. Both P+ and As+ co-implantations followed by post-implantation annealing at 400 to 600°C in InP single crystals have been found to result in a decrease of impurity activation. At the same time an improvement of activation efficiency was observed at annealing temperatures Tann>600°C
Keywords :
Hall effect; III-V semiconductors; annealing; arsenic; indium compounds; ion implantation; phosphorus; zinc; 400 to 600 C; Hall-effect measurement; InP single crystals; InP:Zn,As; InP:Zn,P; InP:Zn+,As+ co-implantation; InP:Zn+,P+ co-implantation; activation efficiency; annealing temperature; impurity activation; post-implantation annealing; Annealing; Atmospheric measurements; Charge carrier processes; Conductivity; Crystals; Gallium arsenide; Impurities; Indium phosphide; Temperature; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
Type :
conf
DOI :
10.1109/SMICND.1996.557405
Filename :
557405
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2123359
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