Raman scattering study of InGaN ternary alloys grown by MOVPE on (0001) sapphire substrates

Author

Sugiura, Touko ; Kawaguchi, Yasutoshi ; Suzuki, Ryotaro ; Tsukamoto, Takehiko ; Andoh, Hiroya ; Yamaguchi, Masahito ; Hiramatsu, Kazumasa ; Sawaki, Nobuhiko

Author_Institution

Dept. of Electr. & Electron. Eng., Toyota Coll. of Technol., Japan

fYear

2000

fDate

2000

Firstpage

170

Lastpage

173

Abstract

We have studied the asymmetric broadening of the Raman spectra of In_xGa_1-xN grown on sapphire substrates with the aid of the spatial correlation model. The asymmetric broadening of E₂ phonon mode is enhanced in the region of immiscibility and enhanced by increasing the indium molar fraction. The correlation length, which corresponds to the decay length of E₂ phonon mode was estimated for the first time. It was of the order of 6~10 nm, which is of the same order of magnitude as the size of the columnar structure suggested by TEM analyses

Keywords

III-V semiconductors; MOCVD; Raman spectra; gallium compounds; indium compounds; phonons; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; Al₂O₃; E₂ phonon mode; In molar fraction; InGaN; MOVPE; Raman scattering; asymmetric broadening; correlation length; sapphire(0001) substrates; spatial correlation model; Buffer layers; Educational institutions; Epitaxial growth; Epitaxial layers; Fluctuations; Indium; Raman scattering; Scanning electron microscopy; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850259

Filename

850259