Title :
Raman scattering study of InGaN ternary alloys grown by MOVPE on (0001) sapphire substrates
Author :
Sugiura, Touko ; Kawaguchi, Yasutoshi ; Suzuki, Ryotaro ; Tsukamoto, Takehiko ; Andoh, Hiroya ; Yamaguchi, Masahito ; Hiramatsu, Kazumasa ; Sawaki, Nobuhiko
Author_Institution :
Dept. of Electr. & Electron. Eng., Toyota Coll. of Technol., Japan
Abstract :
We have studied the asymmetric broadening of the Raman spectra of InxGa1-xN grown on sapphire substrates with the aid of the spatial correlation model. The asymmetric broadening of E2 phonon mode is enhanced in the region of immiscibility and enhanced by increasing the indium molar fraction. The correlation length, which corresponds to the decay length of E2 phonon mode was estimated for the first time. It was of the order of 6~10 nm, which is of the same order of magnitude as the size of the columnar structure suggested by TEM analyses
Keywords :
III-V semiconductors; MOCVD; Raman spectra; gallium compounds; indium compounds; phonons; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; Al2O3; E2 phonon mode; In molar fraction; InGaN; MOVPE; Raman scattering; asymmetric broadening; correlation length; sapphire(0001) substrates; spatial correlation model; Buffer layers; Educational institutions; Epitaxial growth; Epitaxial layers; Fluctuations; Indium; Raman scattering; Scanning electron microscopy; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850259
