DocumentCode :
2123465
Title :
A low-hysteresis and high-sensitivity extended gate FET-based chloride ion-selective sensor
Author :
Hsieh, Chia-Hsu ; Huang, I-Yu ; Wu, Ching-Yi
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-sen Univ. (NSYSU), Kaohsiung, Taiwan
fYear :
2010
fDate :
1-4 Nov. 2010
Firstpage :
358
Lastpage :
361
Abstract :
This study presents an extended gate field-effect transistor (EGFET) chloride ion-selective sensor with very low hysteresis and high sensitivity for the point-of-care testing (POCT) blood analysis. All of the manufacturing processes adopted in this work are compatible with standard planar technology; hence, they are very suitable for mass production. This work firstly investigates the influence of channel width/length ratio on the gate leakage current of the EGFET. Under the optimized channel width/length ratio (1000/10 μm/μm), a very low gate leakage current (±2.3 nA) and high drain current (380 μA) of the implemented EGFET are achieved. Additionally, with the large and uniform sensing area (1 mm × 1mm) of the EGFET, the hysteresis voltage of the presented chloride ion sensor can be effectively reduced to 6 mV at pCl 3 concentration. As the testing concentration ranging from pCl 1 to pCl 5, the EGFET chloride ion sensor demonstrates a relatively high sensitivity (42 mV/pCl) if the proper PVC polymer-based chloride ion sensing membrane is deposited.
Keywords :
biosensors; blood; ion sensitive field effect transistors; manufacturing processes; mass production; sensitivity; EGFET; PVC; blood analysis; chloride ion selective sensor; extended gate FET; hysteresis voltage; manufacturing processes; mass production; point-of-care testing; sensitivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2010 IEEE
Conference_Location :
Kona, HI
ISSN :
1930-0395
Print_ISBN :
978-1-4244-8170-5
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2010.5690237
Filename :
5690237
Link To Document :
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