Degradation of the device characteristics of InGaAs/InP heterostructures after oxygen treatments

Author

Driad, R. ; McKinnon, W.R. ; McAlister, S.P.

Author_Institution

Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

fYear

2000

fDate

2000

Firstpage

182

Lastpage

185

Abstract

The effects of UV-ozone and oxygen plasma treatments on the performance of InP-based heterostructure bipolar transistors (HBTs) have been investigated. Although these processes improve the HBTs current gain, both methods induce a drastic increase of the base-collector leakage current and consequently a degradation of the device breakdown voltage. The performance degradation gets even worse when the devices are capped with a dielectric film deposited by plasma enhanced chemical vapor deposition (PECVD)

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; plasma materials processing; semiconductor device breakdown; surface treatment; ultraviolet radiation effects; HBT; InGaAs-InP; PECVD dielectric cap film; UV-ozone treatment; base-collector leakage current; current gain; device breakdown voltage; heterostructure bipolar transistors; oxygen plasma treatment; performance degradation; Bipolar transistors; Chemical vapor deposition; Degradation; Dielectric films; Indium gallium arsenide; Indium phosphide; Leakage current; Plasma chemistry; Plasma devices; Plasma properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850262

Filename

850262